? 2001 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 24n50 24 a 26n50 26 a i dm t c = 25 c, note 1 24n50 96 a 26n50 104 a i ar t c = 25 c 24n50 24 a 26n50 26 a e ar t c = 25 c 30 mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g n-channel enhancement mode avalanche rated, low q g , high dv/dt features ixys advanced low q g process international standard packages low r ds (on) unclamped inductive switching (uis) rated fast switching molding epoxies meet ul 94 v-0 flammability classification advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 4 ma 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 24n50q 0.23 ? note 2 26n50q 0.20 ? 98512g (5/01) hiperfet tm power mosfets q-class to-247 ad (ixfh) (tab) g = gate,d = drain, s = source,tab = drain to-268 (d3) (ixft) case style (tab) g s v dss i d25 r ds(on) ixfh/ixft 24n50q 500 v 24 a 0.23 ? ? ? ? ? ixfh/ixft 26n50q 500 v 26 a 0.20 ? ? ? ? ? t rr 250 ns
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , note 2 14 24 s c iss 3900 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 500 pf c rss 130 pf t d(on) 28 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 30 ns t d(off) r g = 2 ? (external), 55 ns t f 16 ns q g(on) 95 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 27 nc q gd 40 nc r thjc 0.42 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 24n50q 24 a 26n50q 26 a i sm repetitive; note1 24n50q 96 a 26n50q 104 a v sd i f = i s , v gs = 0 v, 1.3 v pulse test, t 300 s, duty cycle d 2 % t rr 250 ns q rm i f = i s , -di/dt = 100 a/ s, v r = 100 v 0.85 c i rm 8a to-247 ad outline dim. millimeter i nches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 min recommended footprint to-268 outline dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 note 1. pulse width limited by t jm 2. pulse test, t 300 s, duty cycle d 2 % ixfh 24n50q ixft 24n50q ixfh 26n50q ixft 26n50q
? 2001 ixys all rights reserved fig.1 output characteristics @ t j = 25c fig.2 output characteristics @ t j = 125c f ig.3 r ds(on) v s . d r a i n c u r r e n t fig.4 temperature dependence of drain to source resistance fig.5 drain current vs. case temperature fig.6 drain current vs gate source vo ltage t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 5 10 15 20 25 30 v gs - volts 02468 i d - amperes 0 10 20 30 40 50 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 i d = 13a v ds - volts 048121620 i d - amperes 0 10 20 30 40 50 v ds - volts 0 4 8 12 16 20 i d - amperes 0 10 20 30 40 50 60 5v t j = 125 o c v gs = 10v t j = 25 o c 6v 5v 6v v gs =10v 9v 8v 7v v gs =10v 9v 8v 7v i d = 26a t j = 25 o c i d - amperes 0 102030405060 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 t j = 125 o c v gs = 10v t j = 125 o c ixf_26n50q t j = 25 o c ixf_24n50q ixfh 24n50q ixft 24n50q ixfh 26n50q ixft 26n50q
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. v sd - volts 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d - amperes 0 5 10 15 20 25 30 35 40 45 50 pulse width - seconds 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.00 0.01 0.10 1.00 v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 100 1000 10000 gate charge - nc 0 20406080100120 v gs - volts 0 2 4 6 8 10 12 crss coss ciss v ds = 250 v i d = 13 a i g = 10 ma f = 1mhz t j = 125 o c single pulse d=0.01 d=0.02 d=0.05 d=0.1 d=0.2 d=0.5 t j = 25 o c fig.7 gate charge characteristic curve fig.8 capacitance curves fig.9 drain current vs drain to source voltage fig.10 transient thermal impedance ixfh 24n50q ixft 24n50q ixfh 26n50q ixft 26n50q
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